Epitaxial reactor having a wall which is protected from deposits
US5027746A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1989 |
| Grant date | Jul 2, 1991 |
| Priority date | — |
| Expiry date | Mar 21, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial growth reactor for processing wafers (1) of a semiconductor material by exposing it to a reactive gas flow. A wall (8) positioned at a slight distance from the wafer or group of wafers which is exposed to the reactive gas in a double wall, with a very narrow space (34) between the two walls, and this space is filled with a mixture whose composition can be varied and, consequently, the thermal conductivity can be adjusted. The mixture used is a hydrogen/argon mixture, the proportion of each of these gasses in the mixture being adjustable. The interior wall (8) of the double wall is a quartz plate and the exterior wall (9) is made of metal. Relevant FIG.: 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.