Production method for a semiconductor device
US5030589A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 1990 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | Feb 9, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
Abstract
A production method of a semiconductor device includes a first process for producing a gate electrode pattern of double layer structure on a semiconductor substrate, which gate electrode pattern comprises a first layer and a second upper heat-resistant material layers each having different etching property, a second process for plating a resist film on the entire surface of the substrate and etching the same to expose the top portion of the second upper heat-resistant material layer, a third process for removing the second upper heat-resistant material layer, a fourth process for hardening the surface of the resist and conducting over development of the resist, and a fifth process for plating a low resistance metal material on the entire surface of the substrate and removing the low resistance metal material together with the resist film by lift-off method, thereby to produce a gate electrode comprising the first lower heat-resistant material layer and a low resistance metal layer which is produced thereon, wherein the low resistance metal layer has a larger width than that of the first lower heat-resistant material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.