Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage
US5031149A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1989 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | Oct 24, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor device includes word lines, and a non-volatile memory cell array having a plurality of non-volatile memory cells respectively connected to the word lines. The non-volatile semiconductor memory device further includes a level shifter for receiving, in a programmming mode, an address signal supplied from outside, and shifting the potential level of the address signal to a higher programming potential level, and a row decoder, provided between the word lines and the level shifter, for receiving and decoding the address signal which has been shifted by the level shifter, and selecting one of the word lines in accordance with the result of the decoding of the address signal, and setting the potential of the selected word line to the programming potential level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.