Apparatus for forming a thin film on a substrate
US5031571A · kind A · utility
11Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1989 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Jan 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A film-forming apparatus comprising a high-frequency application electrode and an earth electrode. The high-frequency applying electrode has an uneven surface with projections and recesses. An amorphous silicon film is formed uniformly on a substrate at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode and the earth electrode, and positioning the substrate in an atmosphere of the generated glow discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.