Plasma generating apparatus for large area plasma processing
US5032202A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1989 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Oct 3, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.