Method for fabricating insulated gate semiconductor device
US5032532A · kind A · utility
12Cited by
14References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1988 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Aug 17, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n.sup.- -layer surface, forming p-well layers in the n.sup.- -layer using the insulated gates as masks, forming phosphosilicate glass layers on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n.sup.+ -source layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.