Method for manufacturing a liquid crystal display device with thin-film-transistors
US5032536A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1989 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Mar 14, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a liquid crystal color display of the active matrix type. A method of fabricating the display is initiated by depositing a transparent conductive material of indium tin oxide (ITO) as a thin layer onto a glass plate. Then chromium is deposited as an opaque film onto the ITO layer. The two layers are selectively removed, using a first mask pattern. A layer of an insulator consisting of Si.sub.3 N.sub.4 is deposited on the laminate within a reducing atmosphere of plasma. An I-type amorphous silicon layer is formed on the insulator layer. A highly doped N-type amorphous silicon layer is then formed. The N-type silicon layer, the I-type silicon layer, and the silicon nitride layer are selectively removed. An aluminum layer is formed on the laminate and then selectively etched away. Finally, the chromium layer is selectively etched away to form gates, gate leads, pixel electrodes, sources, drains and drain leads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.