Thin film transistor and method of manufacturing the same
US5032883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1988 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Sep 7, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A TFT of the present invention includes a transparent insulative substrate, a gate electrode formed on the substrate, a gate insulating film formed on at least the gate electrode, a semiconductor film formed at a position on the gate insulating film corresponding to the gate electrode, source and drain electrodes arranged on the semiconductor film so as to form a channel portion, a transparent insulating film covering the source and drain electrodes and the semiconductor film, and a transparent electrode connected to the source electrode. A through hole is formed in the transparent insulating film above the source electrode. The transparent electrode is formed on a portion of the transparent insulating film except for a portion above the channel portion on the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.