Method for making a diffraction lattice on a semiconductor material
US5033816A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1988 |
| Grant date | Jul 23, 1991 |
| Priority date | — |
| Expiry date | Dec 15, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/90
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The method consists of the following successive steps: the deposition on a substrate, by epitaxy, of an optical confinement layer, formed by a first semiconducting material; the deposition, by epitaxy of an active layer, formed by a second semiconducting material; the deposition, by epitaxy, of a stop layer, formed by a third semiconducting material, with a thickness of between 0.005 and 0.02 microns; the deposition, by epitaxy, of a guide layer, formed by a fourth semiconducting material, with a thickness of between 0.01 and 0.03 microns; the deposition of a layer of photosensitive resin, and the cutting out of this layer in a shape to be given to the diffraction lattice which is to be made; the attacking of the guide layer by means of a selective, chemical agent which attacks neither the material of the stop layer nor the resin, this chemical agent being allowed to act until the entire thickness of the guide layer has been gone through, said thickness being chosen to be equal to the depth required for the diffraction lattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.