Simplified current sensing structure for MOS power devices
US5034796A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1989 |
| Grant date | Jul 23, 1991 |
| Priority date | — |
| Expiry date | Jun 7, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
In a DMOS power device, a current sensing apparatus comprises bonding pads arranged in specific locations with at least one current sense pad having active cells thereon and a source pad which is separated from the current sense pad. The configuration of cells provides that sources are tied together by a metal layer, which, due to its specific resistance, forms a resistance path between the source pad and the current sense pad or more specifically between the points of contact of a Kelvin lead of the source pad and the current sense pad. The invention has the advantages that substantially the entire chip area is utilized for conduction of power currents and that internal components form a resistive path for current to voltage conversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.