Superluminescent diode
US5034955A · kind A · utility
3Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1989 |
| Grant date | Jul 23, 1991 |
| Priority date | — |
| Expiry date | Nov 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A superluminescent diode has an active layer confined in a channel cut into current blocking layers on a semiconductor substrate. This structure gives a small output beam diameter and high coupling efficiency, even when coupled into single-mode fiber. At the end of the channel distant from the output facet, the active layer makes slanting contact with a rough diffusing surface formed by the current blocking layers and substrate. This easily-manufactured diffusing surface reduces optical gain within the active layer, thereby preventing lasing without requiring an antireflection coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.