Method of making asymmetrical field effect transistor
US5036017A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 27, 1989 |
| Grant date | Jul 30, 1991 |
| Priority date | — |
| Expiry date | Nov 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A method of making a field effect transistor includes forming an active layer in a semiconductor substrate, forming a gate material on a portion of the surface as an ion implantation mask, implanting dopant ions to form a source region, depositing a first mask over the source region and a portion of the gate material, and removing the unmasked gate material to define a gate electrode. A second mask is deposited adjacent the gate electrode opposite the source region, and dopant impurities are implanted to form a drain region using the mask. The source and drain regions are asymmetrically doped and the gate electrode is asymmetrically disposed relative to the source and drain regions in the self-aligning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.