Semiconductor laser with localization of current
US5036522A · kind A · utility
6Cited by
0References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1990 |
| Grant date | Jul 30, 1991 |
| Priority date | — |
| Expiry date | May 24, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure concerns semiconductor lasers in which the current has to be localized, preferably in the emissive strip. In a laser having at least one emissive strip and a contact for current injection, the current is localized on the strip by means of an overdoped well that goes through the confinement layer with doping gradient. This confinement layer is doped to a level of 10.sup.18 at.cm.sup.-3 in the vicinity of the strip and to a level of 2.10.sup.17 at.cm.sup.-3 in the vicinity of the injection contact. The disclosed device can be applied to telecommunications and data processing by optical fibers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.