Method for growing silicon single crystal
US5037503A · kind A · utility
34Cited by
11References
14Claims
0Family size
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Key dates
| Filing date | May 26, 1989 |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.