Method of manufacturing a semiconductor device by ion implantation through an ion-sensitive resist
US5037767A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1989 |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | Sep 29, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the manufacture of a semiconductor device, e.g. a bipolar or MOS transistor, a narrow beam (4) of ions is deflected across a major surface of a semiconductor device body (1,2) to implant ions, e.g. a boron, into a region (3) of the body. In accordance with the invention a resist mask (5a) is obtained autoregistered with the implanted region (3) by effecting the implantation through a layer (5) of ion-sensitive resist thus exposed by the ion beam (4) in the area (5a) overlying the implanted region (3) at the same time as the implantation occurs into the body region (3). The non-exposed area of the layer (3) is afterwards removed by developing the resist, and the ion-exposed area (5a) is then used as a mask during a subsequent processing step, e.g. an etching or doping step, in the device manufacture. The implanted region (3) may be, e.g., a peripheral base region portion of a bipolar transistor or a parasitic-channel stopper below a field insulating layer (2) of an MOS integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.