Process for the production of a field effect transistor using a lanthanum arsenide contact layer
US5037770A · kind A · utility
1Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 1990 |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | Sep 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.