Method for the epitaxial growth of a semiconductor structure
US5037776A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1989 |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | Sep 14, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane-dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber in between layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.