Method for fabricating devices in III-V semiconductor substrates and devices formed thereby
US5039578A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1990 |
| Grant date | Aug 13, 1991 |
| Priority date | — |
| Expiry date | Feb 20, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/929
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.