Compound semiconductor device and method for surface treatment
US5040044A · kind A · utility
86Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jun 20, 1990 |
| Grant date | Aug 13, 1991 |
| Priority date | — |
| Expiry date | Jun 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.