InP-based quantum-well laser
US5040186A · kind A · utility
20Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1990 |
| Grant date | Aug 13, 1991 |
| Priority date | — |
| Expiry date | Aug 7, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2-1.68 .mu.m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.