Wideband amplifier using FET
US5041796A · kind A · utility
4Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1990 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Mar 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/1935
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The amplifier employs an FET having a flat characteristic of mutual conductance versus the potential gap between the gate and the source of the FET. By employing this FET, the amplifier achieves a sufficiently flat gain characteristic in which the gain deviation is very small throughout the range of the objective frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.