Symmetrical blocking high voltage semiconductor device and method of fabrication
US5041896A · kind A · utility
9Cited by
11References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 6, 1989 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Jul 6, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/149
Abstract
An improved symmetrical blocking high voltage semiconductor device structure incorporating a sinker region and a buried region adjacent the periphery of the chip improves device operating characteristics and simplifies device fabrication processes. A heavily doped polycrystalline refill of a trench provides a deep junction sidewall region which brings the lower high voltage blocking junction to the upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.