Semiconductor optical device
US5042049A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1990 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Jan 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3404
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a stained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.