Semiconductor device
US5047090A · kind A · utility
14Cited by
5References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 14, 1990 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Feb 14, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
A semiconductor device includes laminated photoelectric conversion elements each having a semiconductor thin film carrying out the photoelectric conversion, the respective semiconductor thin film having a relationship L.ltoreq.1/.alpha.(.lambda.) when incident light is of a wavelength .lambda., the semiconductor thin film is of an absorbtion coefficient .alpha.(.lambda.) with respect to the light of the wavelength .lambda. and the carrier collecting length is L, whereby the optimum combination of the incident light wavelength and the sensitivity of the device can be obtained to realize a high photoelectric conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.