Process for etching by gas plasma
US5047115A · kind A · utility
41Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1989 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Nov 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for etching a substrate with the aid of a gas plasma produced either by ultra-high frequency waves, or by ultra-high frequency and radio-frequency waves. In this process, the gaseous medium used for the formation of the plasma comprises at least one non-carbon-containing fluorinating gas such as SF.sub.6, at least one rare gas such as Ar and at least one non-carbon-containing oxidizing gas such as oxygen, as well as optionally another gas such as nitrogen. The invention is more particularly usable in the microelectronics field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.