Method for coating substrates with silicon based compounds
US5047131A · kind A · utility
105Cited by
19References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1989 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Nov 8, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron driven by a d.c. potential. The result is a technique of forming a uniform film on large substrates with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.