Heterostructure laser with lattice mismatch
US5048036A · kind A · utility
95Cited by
8References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1991 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Jan 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.