Laser diode
US5048039A · kind A · utility
3Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1990 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Mar 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1228
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode comprises a substrate, a first blocking layer having a groove, an alternate combination of a lower cladding layer and a second blocking layer, an active layer formed in the groove, and an upper cladding layer. A light-amplifying region and a light-absorbing region are formed alternately in the waveguide. Both regions are disposed periodically at a period corresponding to bragg wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.