Magnetic nitride film
US5049209A · kind A · utility
8Cited by
7References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1989 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Dec 7, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12931
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.