Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate
US5049521A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1989 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Nov 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectrically isolated semiconductor devices on a semiconductor substrate. An epitaxial layer is grown on a wafer having a thin buried oxide layer. Trench regions are etched through the epitaxial layer to the underlying oxide layer. A dielectric isolation layer is formed on the sidewalls of the trench regions so as to isolate an active region of the epitaxial semiconductor material. The trenches are etched to the underlying semiconductor substrate and the semiconductor material is selectively epitaxially regrown in the trench regions. Semiconductor devices are formed in the isolated active regions. Contacts are made to the active regions of the semiconductor device and to the wafer substrate through the epitaxially regrown trench regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.