Device and method of manufacturing a device
US5049543A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1989 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Feb 27, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/874
Abstract
A device comprising semiconductor elements and conductor tracks of an oxidic superconductive material, electrically conductive connections being established between the semiconductor elements and the conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer consists of an amorphous alloy of two transition metals, which alloy has a crystallization temperature of at least 900 K. The amorphous alloy has the composition A.sub.x B.sub.1-x, wherein A is selected from Ti, Zr, Hf, Nb and Ta, wherein B is selected from Ir, Pd and Pt, and wherein x has a value from 0.4 to 0.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.