MIS structure photosensor

US5049950A · kind A · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Yoshihisa Fujii · Nara, JP
• Mitsuhiro Shigeta · Sakai, JP
• Katsuki Furukawa · Sakai, JP
• Kenji Nakanishi · Chiba, JP
• Atsuko Ogura · Nara, JP

Key dates

• Filing date: Aug 9, 1990
• Grant date: Sep 17, 1991
• Expiry date: Aug 9, 2010

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.