Semiconductor ballistic electron velocity control structure
US5049955A · kind A · utility
6Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1987 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Jun 12, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/362
Abstract
A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.