Monolithic temperature sensing device
US5049961A · kind A · utility
16Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1989 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Jan 10, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor diode monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode provides a voltage that varies linearly as a function of temperature for the power transistor. The diode is constructed in such a manner so as to prevent latch-up (i.e. where a parasite silicon controlled rectifiers is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.