X-Ray lithography mask and devices made therewith
US5051326A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1989 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e.g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.