Method of manufacturing a semiconductor optoelectric integrated circuit device, having a pin, hemt, and hbt, by selective regrowth
US5051372A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 11, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Apr 11, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary region of the first epitaxial crystal to form a residual portion, and covering the residual portion with a selective growth mask, the second step of growing a second epitaxial crystal on an exposed substrate portion, removing an unnecessary portion of the second epitaxial crystal to form a residual portion of the second epitaxial crystal, and covering the residual portion of the second epitaxial crystal with a selective growth mask, and third step of growing a third epitaxial crystal on an exposed substrate portion and removing an unnecessary region of the third epitaxial crystal, wherein the first to third epitaxial crystal form any one of a pin photodiode crystal, a heterojunction bipolar transistor crystal, and a high electron mobility transistor crystal, and are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.