Imaging system

US5051738A · kind A · utility

Assignee

• Revtek Inc. · US

Inventors

• Aram Tanielian · Rancho Palos Verdes, US
• W. Naugler · Menlo Park, US

Key dates

• Filing date: Feb 27, 1989
• Grant date: Sep 24, 1991
• Expiry date: Feb 27, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142

Abstract

A plurality of semi-conductor diodes disposed in an array may be constructed to emit light when subjected to a particular voltage. This voltage reversely biases the semi-conductor diodes to break down the semi-conductor diodes and to provide for the emission of light upon breakdown. The breakdown occurs at the junction between a pair of electrodes in each semi-conductor diode. One of the electrodes may be an n electrode and the other electrode may be a p electrode. To break down the diode, a positive voltage (e.g. 3-5 volts) may be applied to the n electrode and a ground voltage may be applied to the p electrode. The diodes are so small that an array of 1024.times.1024 diodes can be disposed in a space approximately 0.4" square to act as pixels. The diodes may be scanned, as in a raster scan, preferably on a repetitive basis. During such scan, individual ones of the diodes receive the breakdown voltage in representation of a visual image to provide a visual display of the image in the pixels defined by the diodes. The emitted light for each pixel is visible at the junction between the p electrode and the n electrode in the diode representing such pixel. The n electrode may be shape…