Diode and producing method thereof and contact image sensor device comprising the same
US5051803A · kind A · utility
16Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jun 25, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A pin diode having an incident layer which includes 1 to 10% of microcrystallized silicon is formed in a condition where a molar ratio of hydrogen to monosilane is 5:1 to 100:1 and applied power is 0.001 to 0.05 W/cm.sup.2. The pin diode as well as a contact image sensor comprising the same as excellent photoelectric transfer efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.