Semiconductor device and method for manufacturing the same
US5051812A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jul 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs. The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.