Nonvolatile static memory device utilizing separate power supplies
US5051958A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jul 3, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor nonvolatile memory device includes a static type RAM constituted by a flip-flop circuit having a pair of loads, each load being supplied by separate power sources. An electrically erasable programmable ROM is constituted by a nonvolatile memory transistor operatively connected to the flip-flop circuit. A control circuit controls the supply timing of each of the separate power sources when data stored in the nonvolatile memory transistor is recalled to the flip-flop circuit. In the recall, the supply timing of each of the separate power sources is determined in such a way that the flip-flop circuit is set so as to invert from one state to the other corresponding to the ON/OFF state of the nonvolatile memory transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.