Reflection type mask
US5052033A · kind A · utility
53Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Dec 28, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70958
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.