Radio frequency plasma enhanced chemical vapor deposition process and reactor
US5052339A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Oct 16, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved capacitively coupled radio frequency-plasma enhanced chemical vapor deposition (PECVD) apparatus and process are disclosed for depositing a uniform coating of material on substrates. The apparatus includes a secondary electrode defining a reaction zone within an outer chamber and an RF electrode in concert with the secondary electrode for generating a plasma within the reaction zone. The electrode comprising a base and a finger extending through the reaction zone for distributing a plasma field uniformly throughout the reaction zone. The process comprises heating a substrate to a deposition temperature in the range of about 300.degree. to 650.degree. C. Reactant gases are introduced into the PECVD reactor and a coating of about 0.2 to about 20 .mu.m is deposited onto the heated substrate. This low temperature process is particularly adapted to coating three-dimensional objects of metals, metal alloys and mixtures of metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.