Patent · US Expired

Process for depositing silicon oxide on a substrate

US5053244A · kind A · utility

17Cited by

1References

3Claims

0Family size

Assignee

Leybold GmBH · DE

Inventors

Jorg Kieser · Albstadt, DE
Michael Geisler · Apolda, DE
Rolf Wilhelm · Kornwestheim, DE
Eberhard Rauchle · Waiblingen, DE

Key dates

Filing date	Feb 19, 1988
Grant date	Oct 1, 1991
Priority date	—
Expiry date	Feb 19, 2008

Classification

Technology area (CPC H)Electricity
CPC primaryH05H1/46
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The invention relates to an apparatus for producing a plasma and treating substrates therein. The plasma produced by means of microwaves serves to coat a substrate which is situated in a chamber (5) having metal walls (6,7,12,13). The microwaves are repeatedly reflected at the metal walls (6,7,12,13), so that the chamber (5) has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber (5) or outside the chamber (5) in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber (5) an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.