Plasma processing with metal mask integration
US5053318A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 1989 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | May 18, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention describes methods for altering a substrate in a fine line image pattern using a microlithographic process including formation of a metal mask over a photoresist coating to protect the photoresist coating during dry development of the same. The invention also describes a method for formation of the metal mask. Briefly stated, the process of the invention comprises the steps of coating a substrate with a photoresist coating, exposing the photoresist coating so formed to a desired pattern of actinic radiation, catalyzing the entire surface of the photoresist coating with an electroless plating catalyst, developing the photoresist layer to a depth at least sufficient to remove the undesired catalyst layer in an image pattern, forming a metal pattern on the desired (remaining) catalyst layer and dry developing the remaining photoresist coating unprotected by the metal mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.