Method and means for producing a layered system of semiconductors
US5053355A · kind A · utility
60Cited by
3References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 9, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Jan 9, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.