Method for the low temperature preparation of amorphous boron nitride using alkali metal and haloborazines
US5053365A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Feb 28, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B21/064
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to an energy efficient method for the production of boron nitride materials at temperatures of from about 100 degrees to about 230 degrees Centigrade. The boron nitride materials produced by the present invention are carbon-free and are prepared by combining at reduced pressure an alkali metal, such as potassium, rubidium, cesium, or mixtures thereof, or a potassium/sodium mixture, with a boron-, nitrogen-, and halogen-containing material, such as a haloborazine, haloborazane, or haloaminoborane. The preferred boron-, nitrogen-, and halogen-containing materials are trihalogenated, the preferred halogen is chlorine, and the preferred alkali metal is cesium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.