Method of reducing critical current density of oxide superconductors by radiation damage
US5053383A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1988 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Mar 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/73
Abstract
The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.