Patent · US Expired

Method of reducing critical current density of oxide superconductors by radiation damage

US5053383A · kind A · utility

54Cited by
0References
5Claims
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Assignee

Inventors

Key dates

Filing dateMar 29, 1988
Grant dateOct 1, 1991
Priority date
Expiry dateMar 29, 2008

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S505/73

Abstract

The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.