Thin-film device
US5053845A · kind A · utility
2Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Feb 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/245
Abstract
A thin-film device having the structure of a bipolar transistor is provided. The device has three thin-films formed one on another to form emitter, base and collector regions, thereby providing a NPN or PNP structure depending on the impurities contained in these thin-films. The present bipolar thin-film device is particularly useful as a phototransistor, though use is not limited only for this. A non-transparent, insulating layer having an opening may be provided to limit the passage of light and to improve the transistor characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.