Thin film capacitor and manufacturing method thereof
US5053917A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Aug 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
This film capacitors in accordance with the present invention include a silicon electrode, a first electrode layer consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereby, formed on the silicon electrode, a second electrode layer formed on it consisting of platinum, palladium or rhodium, a dielectric layer formed on it consisting of an oxide ferroelectric substance such as BaTiO.sub.3 and a third electrode layer formed on top of it. As the first electrode layer, use may also be made of rhenium oxide, osmium oxide, rhodium oxide or iridium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.