Method of forming high purity metal silicides targets for sputtering
US5055246A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1991 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Jan 22, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.